Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
FQP6N50
RFQ
VIEW
RFQ
881
In-stock
ON Semiconductor MOSFET N-CH 500V 5.5A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 98W (Tc) N-Channel - 500V 5.5A (Tc) 1.3 Ohm @ 2.8A, 10V 5V @ 250µA 22nC @ 10V 790pF @ 25V 10V ±30V
FQP7N40
RFQ
VIEW
RFQ
3,157
In-stock
ON Semiconductor MOSFET N-CH 400V 7A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 98W (Tc) N-Channel - 400V 7A (Tc) 800 mOhm @ 3.5A, 10V 5V @ 250µA 22nC @ 10V 780pF @ 25V 10V ±30V
FQP6N50C
RFQ
VIEW
RFQ
2,946
In-stock
ON Semiconductor MOSFET N-CH 500V 5.5A TO-220 QFET® Obsolete Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 98W (Tc) N-Channel - 500V 5.5A (Tc) 1.2 Ohm @ 2.8A, 10V 4V @ 250µA 25nC @ 10V 700pF @ 25V 10V ±30V