- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,031
In-stock
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ON Semiconductor | MOSFET P-CH 250V 2.3A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 52W (Tc) | P-Channel | - | 250V | 2.3A (Tc) | 4 Ohm @ 1.15A, 10V | 5V @ 250µA | 8.5nC @ 10V | 250pF @ 25V | 10V | ±30V | |||
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VIEW |
1,347
In-stock
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ON Semiconductor | MOSFET N-CH 250V 3.6A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 52W (Tc) | N-Channel | - | 250V | 3.6A (Tc) | 1.75 Ohm @ 1.8A, 10V | 5V @ 250µA | 5.6nC @ 10V | 200pF @ 25V | 10V | ±30V | |||
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VIEW |
3,448
In-stock
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ON Semiconductor | MOSFET N-CH 250V 2.8A I2PAK | QFET® | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK (TO-262) | 3.13W (Ta), 45W (Tc) | N-Channel | - | 250V | 2.8A (Tc) | 2.2 Ohm @ 1.4A, 10V | 5V @ 250µA | 5.2nC @ 10V | 170pF @ 25V | 10V | ±30V |