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- Current - Continuous Drain (Id) @ 25°C :
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21 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
2,108
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.8A UFM | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | P-Channel | - | 20V | 1.8A (Ta) | 158 mOhm @ 800mA, 4V | 1V @ 1mA | - | 250pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
684
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 35A TO220NIS | U-MOSIII | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 35W (Tc) | N-Channel | - | 60V | 35A (Ta) | 12.5 mOhm @ 18A, 10V | 2.5V @ 1mA | 91nC @ 10V | 5120pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
3,387
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
2,422
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
1,464
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.7A VS-8 | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 330mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 2.7A (Ta) | 110 mOhm @ 1.4A, 4.5V | 1.2V @ 200µA | 6nC @ 5V | 470pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
3,386
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 1.9A UFV | U-MOSIII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.9A (Ta) | 133 mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | ||||
VIEW |
1,512
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 1.9A UFV | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.9A (Ta) | 133 mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | ||||
VIEW |
1,083
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 1.9A UFV | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.9A (Ta) | 133 mOhm @ 1A, 4V | 1V @ 1mA | 1.9nC @ 4V | 123pF @ 15V | 1.8V, 4V | ±12V | ||||
VIEW |
3,029
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V .5A CST4 | U-MOSIII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-SMD, No Lead | CST4 (1.2x0.8) | 400mW (Ta) | N-Channel | - | 20V | 500mA (Ta) | 205 mOhm @ 250mA, 4V | 1.1V @ 1mA | - | 174pF @ 10V | 1.8V, 4V | ±12V | ||||
VIEW |
3,786
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V .5A CST4 | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-SMD, No Lead | CST4 (1.2x0.8) | 400mW (Ta) | N-Channel | - | 20V | 500mA (Ta) | 205 mOhm @ 250mA, 4V | 1.1V @ 1mA | - | 174pF @ 10V | 1.8V, 4V | ±12V | ||||
VIEW |
635
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V .5A CST4 | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 4-SMD, No Lead | CST4 (1.2x0.8) | 400mW (Ta) | N-Channel | - | 20V | 500mA (Ta) | 205 mOhm @ 250mA, 4V | 1.1V @ 1mA | - | 174pF @ 10V | 1.8V, 4V | ±12V | ||||
VIEW |
2,366
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 7.2A PS-8 | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | PS-8 (2.9x2.4) | 1W (Ta), 30W (Tc) | N-Channel | - | 30V | 7.2A (Ta) | 16 mOhm @ 3.6A, 10V | 2.3V @ 1mA | 11nC @ 10V | 640pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,074
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A VS8 2-3U1A | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | VS-8 (2.9x1.5) | 700mW (Ta) | P-Channel | - | 20V | 6A (Ta) | 30 mOhm @ 3A, 4.5V | 1.2V @ 200µA | 19nC @ 5V | 1550pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
837
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 40V 8A SOP8 2-6J1B | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) | 1W (Ta) | P-Channel | - | 40V | 8A (Ta) | 25 mOhm @ 4A, 10V | 2V @ 1mA | 48nC @ 10V | 2180pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
1,098
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 4.5A VS6 2-3T1A | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 20V | 5.5A (Ta) | 40 mOhm @ 2.8A, 4.5V | 1.2V @ 200µA | 19nC @ 5V | 1430pF @ 10V | 1.8V, 4.5V | ±8V | ||||
VIEW |
2,347
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
1,709
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
733
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 1.5A UFV | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD (5 Leads), Flat Lead | UFV | 500mW (Ta) | P-Channel | Schottky Diode (Isolated) | 20V | 1.5A (Ta) | 213 mOhm @ 1A, 4V | 1V @ 1mA | 6.4nC @ 4V | 250pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
2,871
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.3A TSM | U-MOSIII | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 127 mOhm @ 1A, 4V | - | 6.1nC @ 4V | 335pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
1,549
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.3A TSM | U-MOSIII | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 127 mOhm @ 1A, 4V | - | 6.1nC @ 4V | 335pF @ 10V | 1.8V, 4V | ±8V | ||||
VIEW |
1,596
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 20V 2.3A TSM | U-MOSIII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 20V | 2.3A (Ta) | 127 mOhm @ 1A, 4V | - | 6.1nC @ 4V | 335pF @ 10V | 1.8V, 4V | ±8V |