- Packaging :
- Operating Temperature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
1,981
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.18A | U-MOSIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3C | 500mW (Ta) | N-Channel | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
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|
VIEW |
3,154
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.18A | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3C | 500mW (Ta) | N-Channel | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
|
|
VIEW |
1,305
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 0.18A | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | CST3C | 500mW (Ta) | N-Channel | 20V | 250mA (Ta) | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | 36pF @ 10V | 1.2V, 4.5V | ±10V | |||
|
|
VIEW |
2,007
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 100MA CST3C | U-MOSIII | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3C | 500mW (Ta) | N-Channel | 30V | 100mA (Ta) | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 2.5V, 4V | ±20V | |||
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|
VIEW |
3,640
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 100MA CST3C | U-MOSIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3C | 500mW (Ta) | N-Channel | 30V | 100mA (Ta) | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 2.5V, 4V | ±20V | |||
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|
VIEW |
2,455
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 100MA CST3C | U-MOSIII | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SC-101, SOT-883 | CST3C | 500mW (Ta) | N-Channel | 30V | 100mA (Ta) | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | 2.5V, 4V | ±20V | |||
