- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,273
In-stock
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Infineon Technologies | MOSFET N-CH 650V 17.5A TO247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 151W (Tc) | N-Channel | - | 650V | 17.5A (Tc) | 190 mOhm @ 7.3A, 10V | 4.5V @ 730µA | 68nC @ 10V | 1850pF @ 100V | 10V | ±20V | |||
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VIEW |
2,552
In-stock
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Infineon Technologies | MOSFET N-CH 900V 11A TO-247 | CoolMOS™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | PG-TO247-3 | 156W (Tc) | N-Channel | - | 900V | 11A (Tc) | 500 mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | 1700pF @ 100V | 10V | ±20V | |||
