Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SPA20N65C3XKSA1
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1,715
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Infineon Technologies MOSFET N-CH 650V 20.7A TO-220 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 Full Pack PG-TO220-3 34.5W (Tc) N-Channel - 650V 20.7A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 114nC @ 10V 2400pF @ 25V 10V ±20V
SPP20N65C3XKSA1
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RFQ
3,768
In-stock
Infineon Technologies MOSFET N-CH 650V 20.7A TO-220-3 CoolMOS™ Active Tube MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 PG-TO220-3-1 208W (Tc) N-Channel - 650V 20.7A (Tc) 190 mOhm @ 13.1A, 10V 3.9V @ 1mA 114nC @ 10V 2400pF @ 25V 10V ±20V