- Series :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,600
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 42W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | |||
|
VIEW |
983
In-stock
|
Nexperia USA Inc. | MOSFET P-CH 250V 0.225A SOT223 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1.5W (Ta) | P-Channel | - | 250V | 225mA (Ta) | 15 Ohm @ 200mA, 10V | 2.8V @ 1mA | - | 90pF @ 25V | 10V | ±20V | |||
.JPG)
|
VIEW |
3,187
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 4A 8-SOPA | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 45W (Tc) | N-Channel | - | 250V | 4A (Ta) | 580 mOhm @ 2A, 10V | 4V @ 1mA | 10nC @ 10V | 600pF @ 10V | 10V | ±20V | |||
|
|
VIEW |
2,139
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 26A SOP8 | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 78W (Tc) | N-Channel | - | 250V | 26A (Tc) | 52 mOhm @ 13A, 10V | 4V @ 1mA | 22nC @ 10V | 2200pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
2,455
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 15A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 57W (Tc) | N-Channel | - | 250V | 10A (Ta) | 112 mOhm @ 5A, 10V | 4V @ 300µA | 11nC @ 10V | 1100pF @ 100V | 10V | ±20V | |||
|
VIEW |
3,254
In-stock
|
STMicroelectronics | MOSFET N-CH 250V 4A DPAK | MESH OVERLAY™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 50W (Tc) | N-Channel | - | 250V | 4A (Tc) | 1.1 Ohm @ 2A, 10V | 4V @ 250µA | 27nC @ 10V | 355pF @ 25V | 10V | ±20V | |||
|
VIEW |
2,570
In-stock
|
Rohm Semiconductor | MOSFET N-CH 250V 0.5A SC-96-3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 540mW (Ta) | N-Channel | - | 250V | 500mA (Ta) | 8.8 Ohm @ 250mA, 10V | 3V @ 1mA | 3.5nC @ 10V | 70pF @ 25V | 4V, 10V | ±20V | |||
|
VIEW |
1,785
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | |||
