Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPCC8006-H(TE12LQM
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1,912
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 22A 8TSON U-MOSVI-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 30V 22A (Ta) 8 mOhm @ 11A, 10V 2.3V @ 200µA 27nC @ 10V 2200pF @ 10V 4.5V, 10V ±20V
TPCC8103(TE12L,QM)
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1,207
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Toshiba Semiconductor and Storage MOSFET P-CH 30V 18A 8TSON U-MOSV Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) P-Channel - 30V 18A (Ta) 12 mOhm @ 9A, 10V 2V @ 1mA 38nC @ 10V 1600pF @ 10V 4V, 10V ±20V
TPN30008NH,LQ
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2,125
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Toshiba Semiconductor and Storage MOSFET N-CH 80V 9.6A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 80V 9.6A (Tc) 30 mOhm @ 4.8A, 10V 4V @ 100µA 11nC @ 10V 920pF @ 40V 10V ±20V
TPN3300ANH,LQ
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3,337
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 9.4A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 27W (Tc) N-Channel - 100V 9.4A (Tc) 33 mOhm @ 4.7A, 10V 4V @ 100µA 11nC @ 10V 880pF @ 50V 10V ±20V