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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
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- Input Capacitance (Ciss) (Max) @ Vds :
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7 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,569
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2A SOT23 | π-MOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 60V | 2A (Ta) | 300 mOhm @ 1A, 10V | 2V @ 1mA | - | 150pF @ 10V | 3.3V, 10V | ±20V | |||
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VIEW |
3,779
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 38V 2A | U-MOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 38V | 2A (Ta) | 150 mOhm @ 2A, 10V | 1.7V @ 1mA | 3nC @ 10V | 120pF @ 10V | 4V, 10V | ±20V | |||
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VIEW |
2,360
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 6A SOT-23F | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 6A (Ta) | 38 mOhm @ 4A, 10V | 2.5V @ 100µA | 2.7nC @ 4.5V | 340pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,281
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 6A 2-3Z1A | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 6A (Ta) | 28 mOhm @ 5A, 10V | 2.5V @ 100µA | 3.4nC @ 4.5V | 436pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,788
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 30V 4A SOT-23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 30V | 4A (Ta) | 71 mOhm @ 3A, 10V | 2V @ 100µA | 5.9nC @ 10V | 280pF @ 15V | 4V, 10V | ±20V | |||
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VIEW |
1,247
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 3A SOT23F | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 30V | 3A (Ta) | 95 mOhm @ 2A, 10V | 2.5V @ 100µA | 1.7nC @ 4.5V | 126pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,157
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 2.5A TSM | U-MOSIV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 60V | 2.5A (Ta) | 107 mOhm @ 2A, 10V | 2.8V @ 1mA | 7nC @ 10V | 235pF @ 30V | 4.5V, 10V | ±20V |