- Part Status :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 11 mOhm @ 5.5A, 10V (1)
- 11.4 mOhm @ 8.5A, 10V (1)
- 114 mOhm @ 3.6A, 10V (1)
- 12 mOhm @ 9A, 10V (1)
- 13.3 mOhm @ 9A, 10V (1)
- 14 mOhm @ 6.5A, 10V (1)
- 16 mOhm @ 8.5A, 10V (1)
- 16.9 mOhm @ 6.5A, 10V (1)
- 198 mOhm @ 2.8A, 10V (1)
- 2.2 mOhm @ 22.5A, 10V (1)
- 2.5 mOhm @ 20A, 10V (1)
- 2.7 mOhm @ 22.5A, 10V (1)
- 22 mOhm @ 4.5A, 10V (1)
- 30 mOhm @ 4.8A, 10V (1)
- 33 mOhm @ 4.7A, 10V (1)
- 4.2 mOhm @ 11.5A, 10V (1)
- 4.3 mOhm @ 20A, 10V (1)
- 59 mOhm @ 4.5A, 10V (1)
- 6 mOhm @ 13.5A, 10V (1)
- 6.3 mOhm @ 10A, 10V (1)
- 6.4 mOhm @ 13A, 10V (1)
- 7.5 mOhm @ 13A, 10V (1)
- 8 mOhm @ 11A, 10V (1)
- 8.3 mOhm @ 11A, 10V (3)
- 8.9 mOhm @ 10A, 10V (1)
- 9.9 mOhm @ 10.5A, 10V (1)
- Gate Charge (Qg) (Max) @ Vgs :
-
- 11nC @ 10V (2)
- 12nC @ 10V (1)
- 14.8nC @ 10V (1)
- 15nC @ 10V (1)
- 17nC @ 10V (2)
- 18nC @ 10V (1)
- 19nC @ 10V (1)
- 20nC @ 10V (1)
- 21nC @ 10V (1)
- 22nC @ 10V (1)
- 23nC @ 10V (1)
- 24nC @ 10V (2)
- 27nC @ 10V (4)
- 34nC @ 10V (1)
- 35nC @ 10V (1)
- 38nC @ 10V (1)
- 40nC @ 10V (1)
- 7.5nC @ 10V (1)
- 7nC @ 10V (3)
- 9.8nC @ 4.5V (1)
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 1300pF @ 10V (1)
- 1300pF @ 30V (1)
- 1370pF @ 15V (2)
- 1400pF @ 15V (2)
- 1600pF @ 10V (1)
- 1600pF @ 40V (1)
- 1600pF @ 50V (1)
- 1800pF @ 30V (1)
- 1900pF @ 10V (1)
- 2000pF @ 30V (1)
- 2100pF @ 15V (1)
- 2200pF @ 10V (1)
- 2230pF @ 15V (2)
- 2500pF @ 10V (3)
- 2900pF @ 10V (1)
- 600pF @ 100V (2)
- 600pF @ 75V (1)
- 660pF @ 15V (1)
- 710pF @ 30V (1)
- 820pF @ 15V (1)
- 880pF @ 50V (1)
- 920pF @ 40V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
28 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
1,652
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 21A SBD 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 21A (Ta) | 9.9 mOhm @ 10.5A, 10V | 2.3V @ 1mA | 20nC @ 10V | 1900pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,912
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,350
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 26A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 26A (Ta) | 6.4 mOhm @ 13A, 10V | 2.3V @ 500µA | 35nC @ 10V | 2900pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,698
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,576
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 40A 8TSON-ADV | U-MOSVIII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 35W (Tc) | N-Channel | - | 30V | 40A (Ta) | 2.5 mOhm @ 20A, 10V | 2.3V @ 500µA | 40nC @ 10V | 2230pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,282
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 20A 8TSON-ADV | U-MOSVIII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 20A (Ta) | 6.3 mOhm @ 10A, 10V | 2.3V @ 200µA | 24nC @ 10V | 1370pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,591
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 13A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 13A (Ta) | 14 mOhm @ 6.5A, 10V | 4V @ 200µA | 15nC @ 10V | 1300pF @ 30V | 6.5V, 10V | ±20V | |||
|
|
VIEW |
3,848
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,607
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,628
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
867
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 200V 7.2A 8TSON | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 200V | 7.2A (Ta) | 114 mOhm @ 3.6A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
3,749
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 150V 9A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 150V | 9A (Ta) | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 75V | 10V | ±20V | |||
|
|
VIEW |
1,207
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 18A 8TSON | U-MOSV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | P-Channel | - | 30V | 18A (Ta) | 12 mOhm @ 9A, 10V | 2V @ 1mA | 38nC @ 10V | 1600pF @ 10V | 4V, 10V | ±20V | |||
|
|
VIEW |
3,535
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 17A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 60V | 17A (Tc) | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | 2000pF @ 30V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,335
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.2 mOhm @ 22.5A, 10V | 2.3V @ 500µA | 34nC @ 10V | 2230pF @ 15V | 10V | ±20V | |||
|
|
VIEW |
1,188
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 23A 8TSON-ADV | U-MOSVIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 23A (Ta) | 4.2 mOhm @ 11.5A, 10V | 2.3V @ 200µA | 24nC @ 10V | 1370pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,965
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
3,898
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | 820pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
2,125
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 9.6A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 80V | 9.6A (Tc) | 30 mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | 920pF @ 40V | 10V | ±20V | |||
|
|
VIEW |
678
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 27A 8TSON-ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 32W (Tc) | N-Channel | - | 30V | 27A (Tc) | 6 mOhm @ 13.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,638
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 60V 9A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 18W (Tc) | N-Channel | - | 60V | 9A (Ta) | 22 mOhm @ 4.5A, 10V | 4V @ 100µA | 12nC @ 10V | 710pF @ 30V | 6.5V, 10V | ±20V | |||
|
|
VIEW |
2,875
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 100V 17A 8TSON-ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 100V | 17A (Tc) | 16 mOhm @ 8.5A, 10V | 4V @ 200µA | 19nC @ 10V | 1600pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,769
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 26A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 60V | 26A (Tc) | 7.5 mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | 1800pF @ 30V | 6.5V, 10V | ±20V | |||
|
|
VIEW |
908
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,785
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 5.6A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 39W (Tc) | N-Channel | - | 250V | 5.6A (Ta) | 198 mOhm @ 2.8A, 10V | 4V @ 200µA | 7nC @ 10V | 600pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
3,799
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
|
|
VIEW |
1,235
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 40A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 80V | 18A (Tc) | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | 10V | ±20V | |||
|
|
VIEW |
3,337
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 9.4A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 100V | 9.4A (Tc) | 33 mOhm @ 4.7A, 10V | 4V @ 100µA | 11nC @ 10V | 880pF @ 50V | 10V | ±20V | |||
