Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SK3483-AZ
RFQ
VIEW
RFQ
3,207
In-stock
Renesas Electronics America MOSFET N-CH 100V MP-3/TO-251 - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Short Leads, IPak, TO-251AA TO-251 (MP-3) 1W (Ta), 40W (Tc) N-Channel - 100V 28A (Ta) 52 mOhm @ 14A, 10V - 49nC @ 10V 2300pF @ 10V 4.5V, 10V ±20V
RJK0346DPA-01#J0B
RFQ
VIEW
RFQ
926
In-stock
Renesas Electronics America MOSFET N-CH 30V 65A WPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN 8-WPAK 65W (Tc) N-Channel - 30V 65A (Ta) 1.8 mOhm @ 25A, 10V - 49nC @ 10V 7650pF @ 10V 4.5V, 10V ±20V
Default Photo
RFQ
VIEW
RFQ
3,301
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 40A 8SOIC ADV U-MOSIV Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 30V 40A (Ta) 3.5 mOhm @ 20A, 10V 2.5V @ 1mA 49nC @ 10V 2200pF @ 10V 4.5V, 10V ±20V
TPC8036-H(TE12L,QM
RFQ
VIEW
RFQ
681
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 18A 8-SOIC U-MOSVI-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel - 30V 18A (Ta) 4.5 mOhm @ 9A, 10V 2.3V @ 1mA 49nC @ 10V 4600pF @ 10V 4.5V, 10V ±20V