Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK0454DPB-00#J5
RFQ
VIEW
RFQ
1,605
In-stock
Renesas Electronics America MOSFET N-CH 40V 40A LFPAK - Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 55W (Tc) N-Channel 40V 40A (Ta) 4.9 mOhm @ 20A, 10V - 25nC @ 10V 2000pF @ 10V 10V ±20V
RJK0454DPB-00#J5
RFQ
VIEW
RFQ
3,867
In-stock
Renesas Electronics America MOSFET N-CH 40V 40A LFPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 55W (Tc) N-Channel 40V 40A (Ta) 4.9 mOhm @ 20A, 10V - 25nC @ 10V 2000pF @ 10V 10V ±20V
RJK0454DPB-00#J5
RFQ
VIEW
RFQ
3,444
In-stock
Renesas Electronics America MOSFET N-CH 40V 40A LFPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 55W (Tc) N-Channel 40V 40A (Ta) 4.9 mOhm @ 20A, 10V - 25nC @ 10V 2000pF @ 10V 10V ±20V
TK13E25D,S1X(S
RFQ
VIEW
RFQ
1,697
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 13A TO-220AB - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220-3 102W (Tc) N-Channel 250V 13A (Ta) 250 mOhm @ 6.5A, 10V 3.5V @ 1mA 25nC @ 10V 1100pF @ 100V 10V ±20V
TK35E08N1,S1X
RFQ
VIEW
RFQ
1,291
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 80V 55A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 72W (Tc) N-Channel 80V 55A (Tc) 12.2 mOhm @ 17.5A, 10V 4V @ 300µA 25nC @ 10V 1700pF @ 40V 10V ±20V
TK35A08N1,S4X
RFQ
VIEW
RFQ
3,500
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 80V 35A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel 80V 35A (Tc) 12.2 mOhm @ 17.5A, 10V 4V @ 300µA 25nC @ 10V 1700pF @ 40V 10V ±20V
BSP250,135
RFQ
VIEW
RFQ
1,527
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 3A SOT223 - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.65W (Ta) P-Channel 30V 3A (Tc) 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 10V ±20V
BSP250,115
RFQ
VIEW
RFQ
1,158
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 3A SOT223 - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.65W (Ta) P-Channel 30V 3A (Tc) 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 10V ±20V
BSP250,135
RFQ
VIEW
RFQ
1,694
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 3A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.65W (Ta) P-Channel 30V 3A (Tc) 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 10V ±20V
BSP250,115
RFQ
VIEW
RFQ
2,091
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 3A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.65W (Ta) P-Channel 30V 3A (Tc) 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 10V ±20V
BSP250,115
RFQ
VIEW
RFQ
3,465
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 3A SOT223 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.65W (Ta) P-Channel 30V 3A (Tc) 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 10V ±20V
BSP250,135
RFQ
VIEW
RFQ
1,718
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 3A SOT223 - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.65W (Ta) P-Channel 30V 3A (Tc) 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 10V ±20V