- Manufacture :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,226
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 120V 42A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 120V | 42A (Tc) | 9.4 mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | 10V | ±20V | |||
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VIEW |
2,606
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 46A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 80V | 46A (Tc) | 8.4 mOhm @ 23A, 10V | 4V @ 500µA | 37nC @ 10V | 2500pF @ 40V | 10V | ±20V | |||
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VIEW |
2,434
In-stock
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Sanken | MOSFET N-CH 50V 50A TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | - | 50V | 50A (Ta) | 15 mOhm @ 25A, 10V | 4.2V @ 250µA | - | 2000pF @ 10V | 10V | ±20V | |||
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VIEW |
746
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 34A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 100V | 34A (Tc) | 9.5 mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | 2600pF @ 50V | 10V | ±20V | |||
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VIEW |
1,486
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 58A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 60V | 58A (Tc) | 5.4 mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | 3400pF @ 30V | 10V | ±20V | |||
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VIEW |
3,603
In-stock
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Sanken | MOSFET N-CH 250V TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | - | 250V | 18A (Ta) | 250 mOhm @ 9A, 10V | 4V @ 1mA | - | 850pF @ 10V | 10V | ±20V | |||
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VIEW |
3,053
In-stock
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Sanken | MOSFET N-CH 50V 50A TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | - | 50V | 50A (Ta) | 13 mOhm @ 25A, 10V | 2.5V @ 250µA | - | 2700pF @ 10V | 10V | ±20V | |||
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VIEW |
3,803
In-stock
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Sanken | MOSFET N-CH 200V TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | - | 200V | 18A (Ta) | 175 mOhm @ 9A, 10V | 4V @ 1mA | - | 850pF @ 10V | 10V | ±20V | |||
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VIEW |
3,756
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 100V | 40A (Tc) | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | 10V | ±20V |