Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
HAT2173H-EL-E
RFQ
VIEW
RFQ
1,099
In-stock
Renesas Electronics America MOSFET N-CH 100V 25A LFPAK - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 30W (Tc) N-Channel - 100V 25A (Ta) 15 mOhm @ 12.5A, 10V 6V @ 20mA 61nC @ 10V 4350pF @ 10V 8V, 10V ±20V
HAT2173H-EL-E
RFQ
VIEW
RFQ
2,767
In-stock
Renesas Electronics America MOSFET N-CH 100V 25A LFPAK - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 30W (Tc) N-Channel - 100V 25A (Ta) 15 mOhm @ 12.5A, 10V 6V @ 20mA 61nC @ 10V 4350pF @ 10V 8V, 10V ±20V
HAT2173H-EL-E
RFQ
VIEW
RFQ
2,668
In-stock
Renesas Electronics America MOSFET N-CH 100V 25A LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 30W (Tc) N-Channel - 100V 25A (Ta) 15 mOhm @ 12.5A, 10V 6V @ 20mA 61nC @ 10V 4350pF @ 10V 8V, 10V ±20V
TPCA8057-H,LQ(M
RFQ
VIEW
RFQ
2,898
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 42A 8SOP-ADV U-MOSVII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 57W (Tc) N-Channel - 30V 42A (Ta) 2.6 mOhm @ 21A, 10V 2.3V @ 500µA 61nC @ 10V 5200pF @ 10V 4.5V, 10V ±20V