Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK20A25D,S5Q(M
RFQ
VIEW
RFQ
2,724
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A TO-220SIS π-MOSVII Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel 250V 20A (Ta) 100 mOhm @ 10A, 10V 3.5V @ 1mA 55nC @ 10V 2550pF @ 100V 10V ±20V
ATP113-TL-H
RFQ
VIEW
RFQ
3,566
In-stock
ON Semiconductor MOSFET P-CH 60V 35A ATPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount ATPAK (2 leads+tab) ATPAK 50W (Tc) P-Channel 60V 35A (Ta) 29.5 mOhm @ 18A, 10V - 55nC @ 10V 2400pF @ 20V 4V, 10V ±20V
RSD201N10TL
RFQ
VIEW
RFQ
1,788
In-stock
Rohm Semiconductor MOSFET N-CH 100V 20A CPT3 - Not For New Designs Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 850mW (Ta), 20W (Tc) N-Channel 100V 20A (Tc) 46 mOhm @ 20A, 10V 2.5V @ 1mA 55nC @ 10V 2100pF @ 25V 4V, 10V ±20V
RSD201N10TL
RFQ
VIEW
RFQ
941
In-stock
Rohm Semiconductor MOSFET N-CH 100V 20A CPT3 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 850mW (Ta), 20W (Tc) N-Channel 100V 20A (Tc) 46 mOhm @ 20A, 10V 2.5V @ 1mA 55nC @ 10V 2100pF @ 25V 4V, 10V ±20V
RSD201N10TL
RFQ
VIEW
RFQ
1,944
In-stock
Rohm Semiconductor MOSFET N-CH 100V 20A CPT3 - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 850mW (Ta), 20W (Tc) N-Channel 100V 20A (Tc) 46 mOhm @ 20A, 10V 2.5V @ 1mA 55nC @ 10V 2100pF @ 25V 4V, 10V ±20V