Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SK1119(F)
RFQ
VIEW
RFQ
2,164
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 1000V 4A TO-220AB - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 100W (Tc) N-Channel 1000V 4A (Ta) 3.8 Ohm @ 2A, 10V 3.5V @ 1mA 60nC @ 10V 700pF @ 25V 10V ±20V
2SK2266(TE24R,Q)
RFQ
VIEW
RFQ
2,589
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 45A TO220SM - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-220SM 65W (Tc) N-Channel 60V 45A (Ta) 30 mOhm @ 25A, 10V 2V @ 1mA 60nC @ 10V 1800pF @ 10V 4V, 10V ±20V