- Series :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,596
In-stock
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Renesas Electronics America | MOSFET N-CH 100V 23A LFPAK | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 60W (Tc) | N-Channel | - | 100V | 23A (Ta) | 17 mOhm @ 11.5A, 10V | - | 35nC @ 10V | 2550pF @ 10V | 10V | ±20V | |||
|
VIEW |
3,350
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 26A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 26A (Ta) | 6.4 mOhm @ 13A, 10V | 2.3V @ 500µA | 35nC @ 10V | 2900pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
1,463
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 80V 34A SOP | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 61W (Tc) | N-Channel | - | 80V | 34A (Tc) | 8 mOhm @ 17A, 10V | 4V @ 500µA | 35nC @ 10V | 3000pF @ 40V | 10V | ±20V | |||
