Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRF840
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3,864
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STMicroelectronics MOSFET N-CH 500V 8A TO-220 PowerMESH™ II Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 500V 8A (Tc) 850 mOhm @ 3.5A, 10V 4V @ 250µA 39nC @ 10V 832pF @ 25V 10V ±20V
RJK0456DPB-00#J5
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RFQ
3,492
In-stock
Renesas Electronics America MOSFET N-CH 40V LFPAK - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 65W (Tc) N-Channel 40V 50A (Ta) 3.2 mOhm @ 25A, 10V - 39nC @ 10V 3000pF @ 10V 10V ±20V
TPC8014(TE12L,Q,M)
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RFQ
889
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 11A SOP8 2-6J1B - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel 30V 11A (Ta) 14 mOhm @ 5.5A, 10V 2.5V @ 1mA 39nC @ 10V 1860pF @ 10V 4.5V, 10V ±20V