Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SJ377(TE16R1,NQ)
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3,612
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 5A PW-MOLD - Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PW-MOLD 20W (Tc) P-Channel - 60V 5A (Ta) 190 mOhm @ 2.5A, 10V 2V @ 1mA 22nC @ 10V 630pF @ 10V 4V, 10V ±20V
2SJ377(TE16R1,NQ)
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RFQ
3,464
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Toshiba Semiconductor and Storage MOSFET P-CH 60V 5A PW-MOLD - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PW-MOLD 20W (Tc) P-Channel - 60V 5A (Ta) 190 mOhm @ 2.5A, 10V 2V @ 1mA 22nC @ 10V 630pF @ 10V 4V, 10V ±20V
2SJ377(TE16R1,NQ)
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RFQ
3,290
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 60V 5A PW-MOLD - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PW-MOLD 20W (Tc) P-Channel - 60V 5A (Ta) 190 mOhm @ 2.5A, 10V 2V @ 1mA 22nC @ 10V 630pF @ 10V 4V, 10V ±20V
TPCA8016-H(TE12LQM
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RFQ
3,959
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 25A 8-SOPA - Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel - 60V 25A (Ta) 21 mOhm @ 13A, 10V 2.3V @ 1mA 22nC @ 10V 1375pF @ 10V 4.5V, 10V ±20V
TPN7R506NH,L1Q
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RFQ
3,579
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 60V 26A (Tc) 7.5 mOhm @ 13A, 10V 4V @ 200µA 22nC @ 10V 1800pF @ 30V 6.5V, 10V ±20V
TPN7R506NH,L1Q
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RFQ
2,769
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Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 60V 26A (Tc) 7.5 mOhm @ 13A, 10V 4V @ 200µA 22nC @ 10V 1800pF @ 30V 6.5V, 10V ±20V
TPN7R506NH,L1Q
RFQ
VIEW
RFQ
3,336
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 42W (Tc) N-Channel - 60V 26A (Tc) 7.5 mOhm @ 13A, 10V 4V @ 200µA 22nC @ 10V 1800pF @ 30V 6.5V, 10V ±20V