Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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3,697
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 38A 8SOIC ADV U-MOSVI-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 45W (Tc) N-Channel 30V 38A (Ta) 4.2 mOhm @ 19A, 10V 2.3V @ 500µA 50nC @ 10V 4600pF @ 10V 4.5V, 10V ±20V
2SK3430-Z-E1-AZ
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1,880
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Renesas Electronics America MOSFET N-CH 40V 80A TO220AB - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 1.5W (Ta), 84W (Tc) N-Channel 40V 80A (Tc) 7.3 mOhm @ 40A, 10V - 50nC @ 10V 2800pF @ 10V 4V, 10V ±20V
2SK3430-AZ
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3,628
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Renesas Electronics America MOSFET N-CH 40V 80A TO220AB - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 1.5W (Ta), 84W (Tc) N-Channel 40V 80A (Tc) 7.3 mOhm @ 40A, 10V - 50nC @ 10V 2800pF @ 10V 4V, 10V ±20V
RSJ300N10TL
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3,977
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Rohm Semiconductor MOSFET N-CH 100V 30A LPTS - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB LPTS 50W (Tc) N-Channel 100V 30A (Ta) 52 mOhm @ 15A, 10V 2.5V @ 1mA 50nC @ 10V 2200pF @ 25V 4V, 10V ±20V
UPA2820T1S-E2-AT
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1,820
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Renesas Electronics America MOSFET N-CH 30V 8HVSON - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerWDFN - 1.5W (Ta), 16W (Tc) N-Channel 30V 22A (Tc) 5.3 mOhm @ 22A, 10V - 50nC @ 10V 2330pF @ 10V 4.5V, 10V ±20V