Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPCA8052-H(TE12LQM
RFQ
VIEW
RFQ
2,969
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 40V 20A 8SOP U-MOSVI-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 30W (Tc) N-Channel 40V 20A (Ta) 11.3 mOhm @ 10A, 10V 2.3V @ 200µA 25nC @ 10V 2110pF @ 10V 4.5V, 10V ±20V
RJK0454DPB-00#J5
RFQ
VIEW
RFQ
3,867
In-stock
Renesas Electronics America MOSFET N-CH 40V 40A LFPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 55W (Tc) N-Channel 40V 40A (Ta) 4.9 mOhm @ 20A, 10V - 25nC @ 10V 2000pF @ 10V 10V ±20V
BSP250,135
RFQ
VIEW
RFQ
1,694
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 3A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.65W (Ta) P-Channel 30V 3A (Tc) 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 10V ±20V
BSP250,115
RFQ
VIEW
RFQ
2,091
In-stock
Nexperia USA Inc. MOSFET P-CH 30V 3A SOT223 - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1.65W (Ta) P-Channel 30V 3A (Tc) 250 mOhm @ 1A, 10V 2.8V @ 1mA 25nC @ 10V 250pF @ 20V 10V ±20V
RS3E075ATTB
RFQ
VIEW
RFQ
730
In-stock
Rohm Semiconductor MOSFET P-CH 30V 7.5A 8SOP - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 2W (Ta) P-Channel 30V - 23.5 mOhm @ 7.5A, 10V 2.5V @ 1mA 25nC @ 10V 1250pF @ 15V 4.5V, 10V ±20V