- Series :
- Part Status :
- Packaging :
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- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
2,934
In-stock
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ON Semiconductor | MOSFET P-CH 100V 11A TP | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-251-3 Short Leads, IPak, TO-251AA | TP | 1W (Ta), 35W (Tc) | P-Channel | - | 100V | 11A (Ta) | 275 mOhm @ 5.5A, 10V | - | 21nC @ 10V | 1020pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
3,383
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V MP-45F/TO-220 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Isolated Tab | TO-220 Isolated Tab | 2W (Ta), 20W (Tc) | N-Channel | - | 100V | 12A (Tc) | 125 mOhm @ 6A, 10V | - | 21nC @ 10V | 900pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,755
In-stock
|
Renesas Electronics America | MOSFET N-CH 100V 15A 5LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 15W (Tc) | N-Channel | - | 100V | 15A (Ta) | 42 mOhm @ 7.5A, 10V | - | 21nC @ 10V | 1445pF @ 10V | 8V, 10V | ±20V | |||
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|
VIEW |
2,748
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 24A SOP-8 ADV | U-MOSV-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 30W (Tc) | N-Channel | - | 30V | 24A (Ta) | 11 mOhm @ 12A, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,224
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A SOP-8 ADV | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 30W (Tc) | N-Channel | - | 30V | 21A (Ta) | 12.9 mOhm @ 11A, 10V | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,520
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 11A TP-FA | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TP-FA | 1W (Ta), 35W (Tc) | P-Channel | - | 100V | 11A (Ta) | 275 mOhm @ 5.5A, 10V | - | 21nC @ 10V | 1020pF @ 20V | 4V, 10V | ±20V | |||
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|
VIEW |
2,384
In-stock
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ON Semiconductor | MOSFET P-CH 100V 11A TP-FA | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TP-FA | 1W (Ta), 35W (Tc) | P-Channel | - | 100V | 11A (Ta) | 275 mOhm @ 5.5A, 10V | - | 21nC @ 10V | 1020pF @ 20V | 4V, 10V | ±20V | |||
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|
VIEW |
3,037
In-stock
|
ON Semiconductor | MOSFET P-CH 100V 11A TP-FA | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TP-FA | 1W (Ta), 35W (Tc) | P-Channel | - | 100V | 11A (Ta) | 275 mOhm @ 5.5A, 10V | - | 21nC @ 10V | 1020pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
2,815
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 47A 8-SOP | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 44W (Tc) | N-Channel | - | 30V | 47A (Tc) | 3.2 mOhm @ 23.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,455
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 47A 8-SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 44W (Tc) | N-Channel | - | 30V | 47A (Tc) | 3.2 mOhm @ 23.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,892
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 47A 8-SOP | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 44W (Tc) | N-Channel | - | 30V | 47A (Tc) | 3.2 mOhm @ 23.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,940
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,799
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,085
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V | |||
