Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK2507(F)
RFQ
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RFQ
3,258
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 50V 25A TO220NIS - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220NIS 30W (Tc) N-Channel 50V 25A (Ta) 46 mOhm @ 12A, 10V 2V @ 1mA 25nC @ 10V 900pF @ 10V 4V, 10V ±20V
2SJ681(Q)
RFQ
VIEW
RFQ
603
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 60V 5A PW-MOLD - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PW-MOLD2 20W (Ta) P-Channel 60V 5A (Ta) 170 mOhm @ 2.5A, 10V 2V @ 1mA 15nC @ 10V 700pF @ 10V 4V, 10V ±20V
2SJ360(F)
RFQ
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RFQ
1,813
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 60V 1A SC-62 - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-243AA PW-MINI 500mW (Ta) P-Channel 60V 1A (Ta) 730 mOhm @ 500mA, 10V 2V @ 1mA 6.5nC @ 10V 155pF @ 10V 4V, 10V ±20V
2SJ304(F)
RFQ
VIEW
RFQ
3,435
In-stock
Toshiba Semiconductor and Storage MOSFET P-CH 60V 14A TO220NIS - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220NIS 40W (Tc) P-Channel 60V 14A (Ta) 120 mOhm @ 7A, 10V 2V @ 1mA 45nC @ 10V 1200pF @ 10V 4V, 10V ±20V