Supplier Device Package :
Power Dissipation (Max) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 75V 60A TO220W - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220(W) 140W (Tc) N-Channel 75V 60A (Ta) 7.8 mOhm @ 30A, 10V 2.3V @ 1mA 86nC @ 10V 5450pF @ 10V 4.5V, 10V ±20V
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