Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SK3820-DL-1E
RFQ
VIEW
RFQ
2,413
In-stock
ON Semiconductor MOSFET N-CH 100V 26A - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-2 1.65W (Ta), 50W (Tc) N-Channel 100V 26A (Ta) 60 mOhm @ 13A, 10V - 44nC @ 10V 2150pF @ 20V 4V, 10V ±20V
2SK3826
RFQ
VIEW
RFQ
1,163
In-stock
ON Semiconductor MOSFET N-CH 100V 26A TO-220 - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 1.75W (Ta), 45W (Tc) N-Channel 100V 26A (Ta) 60 mOhm @ 13A, 10V 2.6V @ 1mA 42nC @ 10V 2150pF @ 20V 4V, 10V ±20V
2SK3820-DL-E
RFQ
VIEW
RFQ
3,842
In-stock
ON Semiconductor MOSFET N-CH 100V 26A SMP-FD - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB SMP-FD 1.65W (Ta), 50W (Tc) N-Channel 100V 26A (Ta) 60 mOhm @ 13A, 10V - 44nC @ 10V 2150pF @ 20V 4V, 10V ±20V
TPCC8005-H(TE12LQM
RFQ
VIEW
RFQ
1,049
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 26A 8TSON U-MOSVI-H Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel 30V 26A (Ta) 6.4 mOhm @ 13A, 10V 2.3V @ 500µA 35nC @ 10V 2900pF @ 10V 4.5V, 10V ±20V
TPCC8005-H(TE12LQM
RFQ
VIEW
RFQ
3,350
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 26A 8TSON U-MOSVI-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel 30V 26A (Ta) 6.4 mOhm @ 13A, 10V 2.3V @ 500µA 35nC @ 10V 2900pF @ 10V 4.5V, 10V ±20V
TPCC8005-H(TE12LQM
RFQ
VIEW
RFQ
3,789
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 26A 8TSON U-MOSVI-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 30W (Tc) N-Channel 30V 26A (Ta) 6.4 mOhm @ 13A, 10V 2.3V @ 500µA 35nC @ 10V 2900pF @ 10V 4.5V, 10V ±20V
RS1G260MNTB
RFQ
VIEW
RFQ
1,175
In-stock
Rohm Semiconductor MOSFET N-CH 40V 26A 8HSOP - Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 35W (Tc) N-Channel 40V 26A (Ta) 3.3 mOhm @ 26A, 10V 2.5V @ 1mA 44nC @ 10V 2988pF @ 20V 4.5V, 10V ±20V
RS1G260MNTB
RFQ
VIEW
RFQ
3,535
In-stock
Rohm Semiconductor MOSFET N-CH 40V 26A 8HSOP - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 35W (Tc) N-Channel 40V 26A (Ta) 3.3 mOhm @ 26A, 10V 2.5V @ 1mA 44nC @ 10V 2988pF @ 20V 4.5V, 10V ±20V
RS1G260MNTB
RFQ
VIEW
RFQ
3,712
In-stock
Rohm Semiconductor MOSFET N-CH 40V 26A 8HSOP - Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-HSOP 3W (Ta), 35W (Tc) N-Channel 40V 26A (Ta) 3.3 mOhm @ 26A, 10V 2.5V @ 1mA 44nC @ 10V 2988pF @ 20V 4.5V, 10V ±20V