Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPH2010FNH,L1Q
RFQ
VIEW
RFQ
1,872
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8SOP U-MOSVIII-H Discontinued at Digi-Key Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPH2010FNH,L1Q
RFQ
VIEW
RFQ
2,600
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8SOP U-MOSVIII-H Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPH2010FNH,L1Q
RFQ
VIEW
RFQ
2,575
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8SOP U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 42W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPN2010FNH,L1Q
RFQ
VIEW
RFQ
2,825
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8TSON U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPN2010FNH,L1Q
RFQ
VIEW
RFQ
1,785
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8TSON U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V
TPN2010FNH,L1Q
RFQ
VIEW
RFQ
1,449
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 5.6A 8TSON U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-TSON Advance (3.3x3.3) 700mW (Ta), 39W (Tc) N-Channel - 250V 5.6A (Ta) 198 mOhm @ 2.8A, 10V 4V @ 200µA 7nC @ 10V 600pF @ 100V 10V ±20V