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- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,077
In-stock
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Rohm Semiconductor | MOSFET N-CH 60V 22A CPT3 | - | Not For New Designs | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | CPT3 | 850mW (Ta), 20W (Tc) | N-Channel | 60V | 22A (Tc) | 26 mOhm @ 22A, 10V | 3V @ 1mA | 30nC @ 10V | 1500pF @ 10V | 4V, 10V | ±20V | |||
|
VIEW |
1,466
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 52A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | 100V | 22A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | |||
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VIEW |
1,820
In-stock
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Renesas Electronics America | MOSFET N-CH 30V 8HVSON | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerWDFN | - | 1.5W (Ta), 16W (Tc) | N-Channel | 30V | 22A (Tc) | 5.3 mOhm @ 22A, 10V | - | 50nC @ 10V | 2330pF @ 10V | 4.5V, 10V | ±20V | |||
