Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
RK3055ETL
RFQ
VIEW
RFQ
3,345
In-stock
Rohm Semiconductor MOSFET N-CH 60V 8A DPAK - Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 20W (Tc) N-Channel - 60V 8A (Ta) 150 mOhm @ 4A, 10V 2.5V @ 1mA - 520pF @ 10V 10V ±20V
RK3055ETL
RFQ
VIEW
RFQ
3,175
In-stock
Rohm Semiconductor MOSFET N-CH 60V 8A DPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 20W (Tc) N-Channel - 60V 8A (Ta) 150 mOhm @ 4A, 10V 2.5V @ 1mA - 520pF @ 10V 10V ±20V
RK3055ETL
RFQ
VIEW
RFQ
3,850
In-stock
Rohm Semiconductor MOSFET N-CH 60V 8A DPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 20W (Tc) N-Channel - 60V 8A (Ta) 150 mOhm @ 4A, 10V 2.5V @ 1mA - 520pF @ 10V 10V ±20V
TK8A10K3,S5Q
RFQ
VIEW
RFQ
659
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 8A TO-220SIS U-MOSIV Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 18W (Tc) N-Channel - 100V 8A (Ta) 120 mOhm @ 4A, 10V 4V @ 1mA 12.9nC @ 10V 530pF @ 10V 10V ±20V