- Part Status :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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5 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,317
In-stock
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Sanken | MOSFET N-CH 30V 40A TO-263 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 52W (Tc) | N-Channel | - | 30V | 40A (Tc) | 9 mOhm @ 31.5A, 10V | 2.5V @ 250µA | 16.3nC @ 10V | 1030pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,046
In-stock
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Sanken | MOSFET N-CH 30V 40A TO-263 | - | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | 64W (Tc) | N-Channel | - | 30V | 40A (Tc) | 6.5 mOhm @ 39.5A, 10V | 2.5V @ 350µA | 24.6nC @ 10V | 1480pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,801
In-stock
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Rohm Semiconductor | MOSFET N-CH 100V 40A LPTS | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPTS (SC-83) | 1.35W (Ta), 50W (Tc) | N-Channel | - | 100V | 40A (Tc) | 27 mOhm @ 40A, 10V | 2.5V @ 1mA | 90nC @ 10V | 3600pF @ 25V | 4V, 10V | ±20V | |||
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VIEW |
908
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,445
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 36W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | |||
