- Series :
- Part Status :
- Packaging :
- Mounting Type :
- Package / Case :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,607
In-stock
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STMicroelectronics | MOSFET N-CH 200V 18A TO-220 | MESH OVERLAY™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | - | 200V | 18A (Tc) | 180 mOhm @ 9A, 10V | 4V @ 250µA | 72nC @ 10V | 1560pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,958
In-stock
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Sanken | MOSFET N-CH 100V 18A TO-220F | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 32W (Tc) | N-Channel | - | 100V | 18A (Tc) | 48 mOhm @ 11.9A, 10V | 2.5V @ 350µA | 23nC @ 10V | 1530pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,588
In-stock
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STMicroelectronics | MOSFET N-CH 200V 18A TO-220FP | MESH OVERLAY™ | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FP | 40W (Tc) | N-Channel | - | 200V | 18A (Tc) | 180 mOhm @ 9A, 10V | 4V @ 250µA | 72nC @ 10V | 1560pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,821
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 40A 8TSON | U-MOSVIII-H | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 80V | 18A (Tc) | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | 10V | ±20V | |||
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|
VIEW |
1,235
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 40A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 80V | 18A (Tc) | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | 10V | ±20V | |||
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|
VIEW |
2,183
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 80V 40A 8TSON | U-MOSVIII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 80V | 18A (Tc) | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | 1600pF @ 40V | 10V | ±20V | |||
