Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TPCP8005-H(TE85L,F
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RFQ
2,310
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 11A PS-8 U-MOSV-H Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SMD, Flat Lead PS-8 (2.9x2.4) 840mW (Ta) N-Channel 30V 11A (Ta) 12.9 mOhm @ 5.5A, 10V 2.5V @ 1mA 20nC @ 10V 2150pF @ 10V 4.5V, 10V ±20V
RRS110N03TB1
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RFQ
3,504
In-stock
Rohm Semiconductor MOSFET N-CH 30V 11A 8-SOIC - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 2W (Ta) N-Channel 30V 11A (Ta) 12.6 mOhm @ 11A, 10V 2.5V @ 1mA 33nC @ 5V 2000pF @ 10V 4V, 10V ±20V
SFT1345-TL-H
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RFQ
2,384
In-stock
ON Semiconductor MOSFET P-CH 100V 11A TP-FA - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TP-FA 1W (Ta), 35W (Tc) P-Channel 100V 11A (Ta) 275 mOhm @ 5.5A, 10V - 21nC @ 10V 1020pF @ 20V 4V, 10V ±20V
GKI06071
RFQ
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RFQ
2,861
In-stock
Sanken MOSFET N-CH 60V 11A 8DFN - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-DFN (5x6) 3.1W (Ta), 77W (Tc) N-Channel 60V 11A (Ta) 6 mOhm @ 34A, 10V 2.5V @ 1mA 53.6nC @ 10V 3810pF @ 25V 4.5V, 10V ±20V
GKI04076
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RFQ
672
In-stock
Sanken MOSFET N-CH 40V 11A 8DFN - Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerTDFN 8-DFN (5x6) 3.1W (Ta), 46W (Tc) N-Channel 40V 11A (Ta) 8.3 mOhm @ 23.3A, 10V 2.5V @ 350µA 24.9nC @ 10V 1470pF @ 25V 4.5V, 10V ±20V
RF4E110GNTR
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RFQ
3,821
In-stock
Rohm Semiconductor MOSFET N-CH 30V 11A 8-HUML - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerUDFN HUML2020L8 2W (Ta) N-Channel 30V 11A (Ta) 11.3 mOhm @ 11A, 10V 2.5V @ 250µA 7.4nC @ 10V 504pF @ 15V 4.5V, 10V ±20V
RF4E110BNTR
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RFQ
1,407
In-stock
Rohm Semiconductor MOSFET N-CH 30V 11A 8-HUML - Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerUDFN HUML2020L8 2W (Ta) N-Channel 30V 11A (Ta) 11.1 mOhm @ 11A, 10V 2V @ 250µA 24nC @ 10V 1200pF @ 15V 4.5V, 10V ±20V