- Part Status :
- Packaging :
- Package / Case :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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6 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,638
In-stock
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Renesas Electronics America | MOSFET N-CH 20V 60A LFPAK | - | Active | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 30W (Tc) | N-Channel | 20V | 60A (Ta) | 2.6 mOhm @ 30A, 10V | 2.3V @ 1mA | 54nC @ 4.5V | 7750pF @ 10V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,595
In-stock
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Renesas Electronics America | MOSFET N-CH 20V 60A LFPAK | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 30W (Tc) | N-Channel | 20V | 60A (Ta) | 2.6 mOhm @ 30A, 10V | 2.3V @ 1mA | 54nC @ 4.5V | 7750pF @ 10V | 4.5V, 10V | ±20V | |||
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|
VIEW |
3,665
In-stock
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Renesas Electronics America | MOSFET N-CH 20V 60A LFPAK | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-100, SOT-669 | LFPAK | 30W (Tc) | N-Channel | 20V | 60A (Ta) | 2.6 mOhm @ 30A, 10V | 2.3V @ 1mA | 54nC @ 4.5V | 7750pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,731
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.2A UFM | π-MOSVI | Obsolete | Digi-Reel® | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | 20V | 1.2A (Ta) | 310 mOhm @ 600mA, 10V | 2.3V @ 100µA | - | 36pF @ 10V | 4V, 10V | ±20V | |||
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|
VIEW |
3,433
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.2A UFM | π-MOSVI | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | 20V | 1.2A (Ta) | 310 mOhm @ 600mA, 10V | 2.3V @ 100µA | - | 36pF @ 10V | 4V, 10V | ±20V | |||
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|
VIEW |
3,291
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 20V 1.2A UFM | π-MOSVI | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | UFM | 500mW (Ta) | N-Channel | 20V | 1.2A (Ta) | 310 mOhm @ 600mA, 10V | 2.3V @ 100µA | - | 36pF @ 10V | 4V, 10V | ±20V | |||
