Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK42E12N1,S1X
RFQ
VIEW
RFQ
3,388
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 120V 88A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 140W (Tc) N-Channel - 120V 88A (Tc) 9.4 mOhm @ 21A, 10V 4V @ 1mA 52nC @ 10V 3100pF @ 60V 10V ±20V
TK42A12N1,S4X
RFQ
VIEW
RFQ
1,226
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 120V 42A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 120V 42A (Tc) 9.4 mOhm @ 21A, 10V 4V @ 1mA 52nC @ 10V 3100pF @ 60V 10V ±20V
TK56E12N1,S1X
RFQ
VIEW
RFQ
891
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 120V 56A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 168W (Tc) N-Channel - 120V 56A (Ta) 7 mOhm @ 28A, 10V 4V @ 1mA 69nC @ 10V 4200pF @ 60V 10V ±20V
TK72E12N1,S1X
RFQ
VIEW
RFQ
2,644
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 120V 72A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220-3 255W (Tc) N-Channel - 120V 72A (Ta) 4.4 mOhm @ 36A, 10V 4V @ 1mA 130nC @ 10V 8100pF @ 60V 10V ±20V
TK32E12N1,S1X
RFQ
VIEW
RFQ
1,601
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 120V 60A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 98W (Tc) N-Channel - 120V 60A (Tc) 13.8 mOhm @ 16A, 10V 4V @ 500µA 34nC @ 10V 2000pF @ 60V 10V ±20V
TK32A12N1,S4X
RFQ
VIEW
RFQ
3,098
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 120V 32A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 120V 32A (Tc) 13.8 mOhm @ 16A, 10V 4V @ 500µA 34nC @ 10V 2000pF @ 60V 10V ±20V
TK72A12N1,S4X
RFQ
VIEW
RFQ
1,063
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 120V 72A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 120V 72A (Tc) 4.5 mOhm @ 36A, 10V 4V @ 1mA 130nC @ 10V 8100pF @ 60V 10V ±20V
TK56A12N1,S4X
RFQ
VIEW
RFQ
2,002
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 120V 56A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 120V 56A (Tc) 7.5 mOhm @ 28A, 10V 4V @ 1mA 69nC @ 10V 4200pF @ 60V 10V ±20V