Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 10A 8SOP U-MOSV-H Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.173", 4.40mm Width) 8-SOP (5.5x6.0) 1W (Ta) N-Channel Schottky Diode (Body) 30V 10A (Ta) 13.3 mOhm @ 5A, 10V 2.3V @ 1mA 15nC @ 10V 1700pF @ 10V 4.5V, 10V ±20V
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Renesas Electronics America MOSFET N-CH 30V 60A LFPAK - Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 65W (Tc) N-Channel Schottky Diode (Body) 30V 60A (Ta) 2.2 mOhm @ 30A, 10V - 42nC @ 4.5V 6000pF @ 10V 4.5V, 10V ±20V
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Renesas Electronics America MOSFET N-CH 30V 60A LFPAK - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 65W (Tc) N-Channel Schottky Diode (Body) 30V 60A (Ta) 2.2 mOhm @ 30A, 10V - 42nC @ 4.5V 6000pF @ 10V 4.5V, 10V ±20V
RJK03C1DPB-00#J5
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Renesas Electronics America MOSFET N-CH 30V 60A LFPAK - Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount SC-100, SOT-669 LFPAK 65W (Tc) N-Channel Schottky Diode (Body) 30V 60A (Ta) 2.2 mOhm @ 30A, 10V - 42nC @ 4.5V 6000pF @ 10V 4.5V, 10V ±20V