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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	TK72E12N1,S1X	RFQ VIEW	PDF RFQ	2,644 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 120V 72A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220-3	255W (Tc)	N-Channel	-	120V	72A (Ta)	4.4 mOhm @ 36A, 10V	4V @ 1mA	130nC @ 10V	8100pF @ 60V	10V	±20V
	TK100E10N1,S1X	RFQ VIEW	PDF RFQ	3,227 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 100V 100A TO220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	255W (Tc)	N-Channel	-	100V	100A (Ta)	3.4 mOhm @ 50A, 10V	4V @ 1mA	140nC @ 10V	8800pF @ 50V	10V	±20V
	TK100E08N1,S1X	RFQ VIEW	PDF RFQ	2,962 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 100A TO220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	255W (Tc)	N-Channel	-	80V	100A (Ta)	3.2 mOhm @ 50A, 10V	4V @ 1mA	130nC @ 10V	9000pF @ 40V	10V	±20V
	TK100E06N1,S1X	RFQ VIEW	PDF RFQ	1,498 In-stock	Toshiba Semiconductor and Storage	MOSFET N CH 60V 100A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	255W (Tc)	N-Channel	-	60V	100A (Ta)	2.3 mOhm @ 50A, 10V	4V @ 1mA	140nC @ 10V	10500pF @ 30V	10V	±20V

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