- Manufacture :
- Part Status :
- Supplier Device Package :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 117 mOhm @ 1A, 10V (1)
- 20 mOhm @ 3A, 10V (1)
- 240 mOhm @ 1.4A, 10V (2)
- 27.6 mOhm @ 4A, 10V (1)
- 31 mOhm @ 5A, 10V (1)
- 59 mOhm @ 2.5A, 10V (1)
- 59 mOhm @ 3.1A, 10V (1)
- 60 mOhm @ 3A, 10V (1)
- 75 mOhm @ 1.9A, 10V (1)
- 75 mOhm @ 2.5A, 10V (1)
- 81 mOhm @ 2.7A, 10V (1)
- 83 mOhm @ 1.5A, 10V (1)
- 85 mOhm @ 1.35A, 10V (1)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
14 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,121
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 6A VS6 | U-MOSIV | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 30V | 6A (Ta) | 20 mOhm @ 3A, 10V | 2.5V @ 1mA | 14nC @ 10V | 640pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,250
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 6.1A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 60V | 6.1A (Ta) | 59 mOhm @ 3.1A, 10V | 2.3V @ 100µA | 12nC @ 10V | 830pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,381
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 5.3A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 40V | 5.3A (Ta) | 81 mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7nC @ 10V | 290pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,684
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 5.9A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 30V | 5.9A (Ta) | 60 mOhm @ 3A, 10V | 2.3V @ 100µA | 4.8nC @ 10V | 300pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,527
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 5A VS-6 | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | - | 30V | 5A (Ta) | 59 mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3nC @ 10V | 490pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,226
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 5A TSMT8 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | TSMT8 | 700mW (Ta) | P-Channel | - | 30V | 5A (Ta) | 31 mOhm @ 5A, 10V | 2.5V @ 1mA | 28nC @ 10V | 1300pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
3,138
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.7A TSM | U-MOSII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 30V | 2.7A (Ta) | 85 mOhm @ 1.35A, 10V | - | - | 413pF @ 15V | 4V, 10V | ±20V | ||||
VIEW |
2,923
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 2.9A TSM | π-MOSVII | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 2.9A (Ta) | 83 mOhm @ 1.5A, 10V | 2.6V @ 1mA | 3.3nC @ 4V | 180pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
1,093
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 6A TSM | U-MOSIV | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | N-Channel | - | 30V | 6A (Ta) | 27.6 mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1nC @ 10V | 450pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,435
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 3.9A VS6 2-3T1A | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 40V | 3.9A (Ta) | 75 mOhm @ 1.9A, 10V | 2.3V @ 1mA | 4.4nC @ 10V | 251pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,435
In-stock
|
Rohm Semiconductor | MOSFET P-CH 30V 2.5A WEMT6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | P-Channel | - | 30V | 2.5A (Ta) | 75 mOhm @ 2.5A, 10V | 2.5V @ 1mA | 5.2nC @ 5V | 480pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
1,559
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 1.4A WEMT6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | N-Channel | - | 30V | 1.4A (Ta) | 240 mOhm @ 1.4A, 10V | 2.5V @ 1mA | 1.4nC @ 5V | 70pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
1,620
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 2.4A TSM | - | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | - | 30V | 2.4A (Ta) | 117 mOhm @ 1A, 10V | - | 2.5nC @ 15V | 280pF @ 15V | 4V, 10V | ±20V | ||||
VIEW |
3,762
In-stock
|
Rohm Semiconductor | MOSFET N-CH 30V 1.4A WEMT6 | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | 6-WEMT | 700mW (Ta) | N-Channel | Schottky Diode (Isolated) | 30V | 1.4A (Ta) | 240 mOhm @ 1.4A, 10V | 2.5V @ 1mA | 1.4nC @ 5V | 70pF @ 10V | 4V, 10V | ±20V |