- Series :
- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,381
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 40V 5.3A VS6 | U-MOSVI-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 40V | 5.3A (Ta) | 81 mOhm @ 2.7A, 10V | 2.3V @ 100µA | 4.7nC @ 10V | 290pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,435
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 40V 3.9A VS6 2-3T1A | U-MOSIII-H | Obsolete | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | N-Channel | - | 40V | 3.9A (Ta) | 75 mOhm @ 1.9A, 10V | 2.3V @ 1mA | 4.4nC @ 10V | 251pF @ 10V | 4.5V, 10V | ±20V |