- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
3,388
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 120V 88A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 140W (Tc) | N-Channel | 120V | 88A (Tc) | 9.4 mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | 10V | ±20V | |||
|
VIEW |
3,807
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 75V 60A TO220W | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220(W) | 140W (Tc) | N-Channel | 75V | 60A (Ta) | 7.8 mOhm @ 30A, 10V | 2.3V @ 1mA | 86nC @ 10V | 5450pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,652
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 55A TO220W | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220(W) | 140W (Tc) | N-Channel | 100V | 55A (Ta) | 10.5 mOhm @ 27A, 10V | 2.3V @ 1mA | 110nC @ 10V | 5700pF @ 10V | 4.5V, 10V | ±20V | |||
