Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK1001DPP-E0#T2
RFQ
VIEW
RFQ
950
In-stock
Renesas Electronics America MOSFET N-CH 100V 80A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 100V 80A (Ta) 5.5 mOhm @ 40A, 10V - 147nC @ 10V 10000pF @ 10V 10V ±20V
RJK1002DPP-E0#T2
RFQ
VIEW
RFQ
2,899
In-stock
Renesas Electronics America MOSFET N-CH 100V 70A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 100V 70A (Ta) 7.6 mOhm @ 35A, 10V - 94nC @ 10V 6450pF @ 10V 10V ±20V
TK35A08N1,S4X
RFQ
VIEW
RFQ
3,500
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 80V 35A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 80V 35A (Tc) 12.2 mOhm @ 17.5A, 10V 4V @ 300µA 25nC @ 10V 1700pF @ 40V 10V ±20V
TK22A10N1,S4X
RFQ
VIEW
RFQ
1,466
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 52A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 100V 22A (Tc) 13.8 mOhm @ 11A, 10V 4V @ 300µA 28nC @ 10V 1800pF @ 50V 10V ±20V
TK32A12N1,S4X
RFQ
VIEW
RFQ
3,098
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 120V 32A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 120V 32A (Tc) 13.8 mOhm @ 16A, 10V 4V @ 500µA 34nC @ 10V 2000pF @ 60V 10V ±20V
STP8NS25FP
RFQ
VIEW
RFQ
1,131
In-stock
STMicroelectronics MOSFET N-CH 250V 8A TO-220FP MESH OVERLAY™ Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220FP 30W (Tc) N-Channel - 250V 8A (Tc) 450 mOhm @ 4A, 10V 4V @ 250µA 51.8nC @ 10V 770pF @ 25V 10V ±20V
TK40A06N1,S4X
RFQ
VIEW
RFQ
870
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 60V 60A TO220SIS U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 30W (Tc) N-Channel - 60V 40A (Tc) 10.4 mOhm @ 20A, 10V 4V @ 300µA 23nC @ 10V 1700pF @ 30V 10V ±20V