- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
2,410
In-stock
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Renesas Electronics America | MOSFET P-CH 30V 11A 8SOP | - | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP | 1.1W (Ta) | P-Channel | - | 30V | 11A (Ta) | 13 mOhm @ 11A, 10V | - | 45nC @ 10V | 1750pF @ 10V | 4.5V, 10V | ±20V | |||
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VIEW |
2,167
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 18A 8SOP | U-MOSVII-H | Active | Tape & Reel (TR) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP | 1W (Ta) | N-Channel | - | 30V | 18A (Ta) | 5.8 mOhm @ 9A, 10V | 2.3V @ 300µA | 34nC @ 10V | 2900pF @ 10V | 4.5V, 10V | ±20V | |||
