Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK3746
RFQ
VIEW
RFQ
3,458
In-stock
ON Semiconductor MOSFET N-CH 1500V 2A TO-3PB - Obsolete Tray MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3PB 2.5W (Ta), 110W (Tc) N-Channel 1500V 2A (Ta) 13 Ohm @ 1A, 10V - 37.5nC @ 10V 380pF @ 30V 10V ±20V
2SK2744(F)
RFQ
VIEW
RFQ
2,939
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 50V 45A TO-3PN - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 125W (Tc) N-Channel 50V 45A (Ta) 20 mOhm @ 25A, 10V 3.5V @ 1mA 68nC @ 10V 2300pF @ 10V 10V ±20V
2SK3128(Q)
RFQ
VIEW
RFQ
3,748
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 60A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 150W (Tc) N-Channel 30V 60A (Ta) 12 mOhm @ 30A, 10V 3V @ 1mA 66nC @ 10V 2300pF @ 10V 10V ±20V
2SK2995(F)
RFQ
VIEW
RFQ
3,478
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 30A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N)IS 90W (Tc) N-Channel 250V 30A (Ta) 68 mOhm @ 15A, 10V 3.5V @ 1mA 132nC @ 10V 5400pF @ 10V 10V ±20V
2SK2967(F)
RFQ
VIEW
RFQ
2,119
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 30A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 150W (Tc) N-Channel 250V 30A (Ta) 68 mOhm @ 15A, 10V 3.5V @ 1mA 132nC @ 10V 5400pF @ 10V 10V ±20V