Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RRH100P03TB1
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2,799
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Rohm Semiconductor MOSFET P-CH 30V 10A SOP8 - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOP 650mW (Ta) P-Channel 30V 10A (Ta) 12.6 mOhm @ 10A, 10V 2.5V @ 1mA 39nC @ 5V 3600pF @ 10V 4V, 10V ±20V
RQ3E100MNTB1
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2,976
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Rohm Semiconductor MOSFET N-CH 30V 10A HSMT8 - Not For New Designs Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-HSMT (3.2x3) 2W (Ta) N-Channel 30V 10A (Ta) 12.3 mOhm @ 10A, 10V 2.5V @ 1mA 9.9nC @ 10V 520pF @ 15V 4.5V, 10V ±20V
RQ3E100MNTB1
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2,632
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Rohm Semiconductor MOSFET N-CH 30V 10A HSMT8 - Not For New Designs Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-HSMT (3.2x3) 2W (Ta) N-Channel 30V 10A (Ta) 12.3 mOhm @ 10A, 10V 2.5V @ 1mA 9.9nC @ 10V 520pF @ 15V 4.5V, 10V ±20V
RQ3E100MNTB1
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RFQ
2,196
In-stock
Rohm Semiconductor MOSFET N-CH 30V 10A HSMT8 - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-HSMT (3.2x3) 2W (Ta) N-Channel 30V 10A (Ta) 12.3 mOhm @ 10A, 10V 2.5V @ 1mA 9.9nC @ 10V 520pF @ 15V 4.5V, 10V ±20V
RSD100N10TL
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1,175
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Rohm Semiconductor MOSFET N-CH 100V 10A CPT3 - Not For New Designs Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 CPT3 20W (Tc) N-Channel 100V 10A (Ta) 133 mOhm @ 5A, 10V 2.5V @ 1mA 18nC @ 10V 700pF @ 25V 4V, 10V ±20V