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Picture	Mfr Part #	QUANTITY		Inventory	MANUFACTURE	Description	Package	Series	Part Status	Packaging	Technology	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package	Power Dissipation (Max)	FET Type	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
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	2SK2507(F)	RFQ VIEW	PDF RFQ	3,258 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 50V 25A TO220NIS		-	Obsolete	Bulk	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220NIS	30W (Tc)	N-Channel	-	50V	25A (Ta)	46 mOhm @ 12A, 10V	2V @ 1mA	25nC @ 10V	900pF @ 10V	4V, 10V	±20V
	TK13E25D,S1X(S	RFQ VIEW	PDF RFQ	1,697 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 250V 13A TO-220AB		-	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220-3	102W (Tc)	N-Channel	-	250V	13A (Ta)	250 mOhm @ 6.5A, 10V	3.5V @ 1mA	25nC @ 10V	1100pF @ 100V	10V	±20V
	TK35E08N1,S1X	RFQ VIEW	PDF RFQ	1,291 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 55A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3	TO-220	72W (Tc)	N-Channel	-	80V	55A (Tc)	12.2 mOhm @ 17.5A, 10V	4V @ 300µA	25nC @ 10V	1700pF @ 40V	10V	±20V
	TK35A08N1,S4X	RFQ VIEW	PDF RFQ	3,500 In-stock	Toshiba Semiconductor and Storage	MOSFET N-CH 80V 35A TO-220		U-MOSVIII-H	Active	Tube	MOSFET (Metal Oxide)	150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220SIS	30W (Tc)	N-Channel	-	80V	35A (Tc)	12.2 mOhm @ 17.5A, 10V	4V @ 300µA	25nC @ 10V	1700pF @ 40V	10V	±20V

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