Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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RJK1002DPN-E0#T2
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1,560
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Renesas Electronics America MOSFET N-CH 100V 70A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel 100V 70A (Ta) 7.6 mOhm @ 35A, 10V - 94nC @ 10V 6450pF @ 10V 10V ±20V
2SK3128(Q)
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RFQ
3,748
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Toshiba Semiconductor and Storage MOSFET N-CH 30V 60A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 150W (Tc) N-Channel 30V 60A (Ta) 12 mOhm @ 30A, 10V 3V @ 1mA 66nC @ 10V 2300pF @ 10V 10V ±20V
2SK2967(F)
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2,119
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Toshiba Semiconductor and Storage MOSFET N-CH 250V 30A TO-3PN - Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3, SC-65-3 TO-3P(N) 150W (Tc) N-Channel 250V 30A (Ta) 68 mOhm @ 15A, 10V 3.5V @ 1mA 132nC @ 10V 5400pF @ 10V 10V ±20V
RJK0602DPN-E0#T2
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RFQ
3,927
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Renesas Electronics America MOSFET N-CH 60V 100A TO220 - Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 150W (Tc) N-Channel 60V 110A (Ta) 3.9 mOhm @ 50A, 10V - 90nC @ 10V 6450pF @ 10V 10V ±20V
R6025ANZC8
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RFQ
853
In-stock
Rohm Semiconductor MOSFET N-CH 600V 25A TO3PF - Not For New Designs Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-3P-3 Full Pack TO-3PF 150W (Tc) N-Channel 600V 25A (Tc) 150 mOhm @ 12.5A, 10V 4.5V @ 1mA 88nC @ 10V 3250pF @ 10V 10V ±20V