Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
TK20A25D,S5Q(M
RFQ
VIEW
RFQ
2,724
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 20A TO-220SIS π-MOSVII Obsolete Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 45W (Tc) N-Channel - 250V 20A (Ta) 100 mOhm @ 10A, 10V 3.5V @ 1mA 55nC @ 10V 2550pF @ 100V 10V ±20V
SSM3K303T(TE85L,F)
RFQ
VIEW
RFQ
3,164
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 2.9A TSM π-MOSVII Obsolete Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 30V 2.9A (Ta) 83 mOhm @ 1.5A, 10V 2.6V @ 1mA 3.3nC @ 4V 180pF @ 10V 4V, 10V ±20V
SSM3K303T(TE85L,F)
RFQ
VIEW
RFQ
2,584
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 2.9A TSM π-MOSVII Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 30V 2.9A (Ta) 83 mOhm @ 1.5A, 10V 2.6V @ 1mA 3.3nC @ 4V 180pF @ 10V 4V, 10V ±20V
SSM3K303T(TE85L,F)
RFQ
VIEW
RFQ
2,923
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 30V 2.9A TSM π-MOSVII Obsolete Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 TSM 700mW (Ta) N-Channel - 30V 2.9A (Ta) 83 mOhm @ 1.5A, 10V 2.6V @ 1mA 3.3nC @ 4V 180pF @ 10V 4V, 10V ±20V