Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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TK34A10N1,S4X
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RFQ
746
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Toshiba Semiconductor and Storage MOSFET N-CH 100V 34A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220SIS 35W (Tc) N-Channel - 100V 34A (Tc) 9.5 mOhm @ 17A, 10V 4V @ 500µA 38nC @ 10V 2600pF @ 50V 10V ±20V
TK34E10N1,S1X
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VIEW
RFQ
2,123
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 100V 75A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 103W (Tc) N-Channel - 100V 75A (Tc) 9.5 mOhm @ 17A, 10V 4V @ 500µA 38nC @ 10V 2600pF @ 50V 10V ±20V
TPH5R906NH,L1Q
RFQ
VIEW
RFQ
2,002
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 28A 8-SOP ADV U-MOSVIII-H Active Digi-Reel® MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 57W (Tc) N-Channel - 60V 28A (Ta) 5.9 mOhm @ 14A, 10V 4V @ 300µA 38nC @ 10V 3100pF @ 30V 10V ±20V
TPH5R906NH,L1Q
RFQ
VIEW
RFQ
3,689
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 28A 8-SOP ADV U-MOSVIII-H Active Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 57W (Tc) N-Channel - 60V 28A (Ta) 5.9 mOhm @ 14A, 10V 4V @ 300µA 38nC @ 10V 3100pF @ 30V 10V ±20V
TPH5R906NH,L1Q
RFQ
VIEW
RFQ
3,188
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 28A 8-SOP ADV U-MOSVIII-H Active Tape & Reel (TR) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-PowerVDFN 8-SOP Advance (5x5) 1.6W (Ta), 57W (Tc) N-Channel - 60V 28A (Ta) 5.9 mOhm @ 14A, 10V 4V @ 300µA 38nC @ 10V 3100pF @ 30V 10V ±20V