- Manufacture :
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- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
1,898
In-stock
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ON Semiconductor | MOSFET N-CH 100V 40A TO-220 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.75W (Ta), 60W (Tc) | N-Channel | - | 100V | 40A (Ta) | 34 mOhm @ 20A, 10V | 2.6V @ 1mA | 79nC @ 10V | 4200pF @ 20V | 4V, 10V | ±20V | ||||
VIEW |
2,936
In-stock
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ON Semiconductor | MOSFET N-CH 60V 40A TO220-3 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.75W (Ta), 45W (Tc) | N-Channel | - | 60V | 40A (Ta) | 27.5 mOhm @ 20A, 10V | 2.6V @ 1mA | 40nC @ 10V | 1780pF @ 20V | 4V, 10V | ±20V | ||||
VIEW |
3,209
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 60V 40A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 67W (Tc) | N-Channel | - | 60V | 40A (Ta) | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | 1700pF @ 30V | 10V | ±20V |