Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
2SK3827
RFQ
VIEW
RFQ
1,898
In-stock
ON Semiconductor MOSFET N-CH 100V 40A TO-220 - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 1.75W (Ta), 60W (Tc) N-Channel - 100V 40A (Ta) 34 mOhm @ 20A, 10V 2.6V @ 1mA 79nC @ 10V 4200pF @ 20V 4V, 10V ±20V
2SK3823
RFQ
VIEW
RFQ
2,936
In-stock
ON Semiconductor MOSFET N-CH 60V 40A TO220-3 - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 1.75W (Ta), 45W (Tc) N-Channel - 60V 40A (Ta) 27.5 mOhm @ 20A, 10V 2.6V @ 1mA 40nC @ 10V 1780pF @ 20V 4V, 10V ±20V
TK40E06N1,S1X
RFQ
VIEW
RFQ
3,209
In-stock
Toshiba Semiconductor and Storage MOSFET N CH 60V 40A TO-220 U-MOSVIII-H Active Tube MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220 67W (Tc) N-Channel - 60V 40A (Ta) 10.4 mOhm @ 20A, 10V 4V @ 300µA 23nC @ 10V 1700pF @ 30V 10V ±20V