- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,898
In-stock
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ON Semiconductor | MOSFET N-CH 100V 40A TO-220 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.75W (Ta), 60W (Tc) | N-Channel | - | 100V | 40A (Ta) | 34 mOhm @ 20A, 10V | 2.6V @ 1mA | 79nC @ 10V | 4200pF @ 20V | 4V, 10V | ±20V | |||
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|
VIEW |
1,163
In-stock
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ON Semiconductor | MOSFET N-CH 100V 26A TO-220 | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 1.75W (Ta), 45W (Tc) | N-Channel | - | 100V | 26A (Ta) | 60 mOhm @ 13A, 10V | 2.6V @ 1mA | 42nC @ 10V | 2150pF @ 20V | 4V, 10V | ±20V | |||
|
VIEW |
2,911
In-stock
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Sanken | MOSFET N-CH 100V 34A TO-220 | - | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 90W (Tc) | N-Channel | - | 100V | 34A (Tc) | 28.8 mOhm @ 17.1A, 10V | 2.5V @ 650µA | 36.5nC @ 10V | 2540pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,123
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 75A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 103W (Tc) | N-Channel | - | 100V | 75A (Tc) | 9.5 mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | 2600pF @ 50V | 10V | ±20V | |||
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|
VIEW |
2,633
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 52A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 72W (Tc) | N-Channel | - | 100V | 52A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | |||
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|
VIEW |
3,227
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 100A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 255W (Tc) | N-Channel | - | 100V | 100A (Ta) | 3.4 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | 10V | ±20V | |||
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|
VIEW |
2,027
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 148A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 192W (Tc) | N-Channel | - | 100V | 148A (Ta) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
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|
VIEW |
1,761
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 100V 90A TO220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220 | 126W (Tc) | N-Channel | - | 100V | 90A (Tc) | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | 10V | ±20V | |||
