- Series :
- Part Status :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 10.4 mOhm @ 20A, 10V (1)
- 100 mOhm @ 10A, 10V (1)
- 12.2 mOhm @ 17.5A, 10V (1)
- 120 mOhm @ 4A, 10V (1)
- 13.8 mOhm @ 11A, 10V (1)
- 13.8 mOhm @ 16A, 10V (1)
- 15 mOhm @ 15A, 10V (1)
- 2.7 mOhm @ 50A, 10V (1)
- 3.2 mOhm @ 50A, 10V (1)
- 3.8 mOhm @ 50A, 10V (1)
- 4.5 mOhm @ 36A, 10V (1)
- 4.5 mOhm @ 40A, 10V (1)
- 4.8 mOhm @ 32.5A, 10V (1)
- 5.4 mOhm @ 29A, 10V (1)
- 7.5 mOhm @ 28A, 10V (1)
- 8.2 mOhm @ 20A, 10V (1)
- 8.4 mOhm @ 23A, 10V (1)
- 9.4 mOhm @ 21A, 10V (1)
- 9.5 mOhm @ 17A, 10V (1)
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
-
- 10500pF @ 30V (1)
- 1050pF @ 30V (1)
- 1700pF @ 30V (1)
- 1700pF @ 40V (1)
- 1800pF @ 50V (1)
- 2000pF @ 60V (1)
- 2500pF @ 40V (1)
- 2550pF @ 100V (1)
- 2600pF @ 50V (1)
- 3000pF @ 50V (1)
- 3100pF @ 60V (1)
- 3400pF @ 30V (1)
- 4200pF @ 60V (1)
- 530pF @ 10V (1)
- 5400pF @ 50V (1)
- 8100pF @ 60V (1)
- 8200pF @ 10V (1)
- 8800pF @ 50V (1)
- 9000pF @ 40V (1)
- Applied Filters :
19 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
|
VIEW |
2,724
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 250V 20A TO-220SIS | π-MOSVII | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 250V | 20A (Ta) | 100 mOhm @ 10A, 10V | 3.5V @ 1mA | 55nC @ 10V | 2550pF @ 100V | 10V | ±20V | |||
|
|
VIEW |
659
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 8A TO-220SIS | U-MOSIV | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 18W (Tc) | N-Channel | - | 100V | 8A (Ta) | 120 mOhm @ 4A, 10V | 4V @ 1mA | 12.9nC @ 10V | 530pF @ 10V | 10V | ±20V | |||
|
VIEW |
1,226
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 42A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 120V | 42A (Tc) | 9.4 mOhm @ 21A, 10V | 4V @ 1mA | 52nC @ 10V | 3100pF @ 60V | 10V | ±20V | |||
|
|
VIEW |
2,606
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 46A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 80V | 46A (Tc) | 8.4 mOhm @ 23A, 10V | 4V @ 500µA | 37nC @ 10V | 2500pF @ 40V | 10V | ±20V | |||
|
|
VIEW |
3,500
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 35A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 80V | 35A (Tc) | 12.2 mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | 1700pF @ 40V | 10V | ±20V | |||
|
|
VIEW |
746
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 34A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 100V | 34A (Tc) | 9.5 mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | 2600pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
1,466
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 52A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 100V | 22A (Tc) | 13.8 mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | 1800pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
3,098
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 32A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 120V | 32A (Tc) | 13.8 mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | 2000pF @ 60V | 10V | ±20V | |||
|
|
VIEW |
1,486
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 58A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 60V | 58A (Tc) | 5.4 mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | 3400pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
1,836
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 80V 214A TO220SIS | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 80V | 100A (Tc) | 3.2 mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | 9000pF @ 40V | 10V | ±20V | |||
|
|
VIEW |
3,003
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 75V 80A TO220SIS | U-MOSVIII-H | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 75V | 80A (Ta) | 4.5 mOhm @ 40A, 10V | 4V @ 1mA | 175nC @ 10V | 8200pF @ 10V | 10V | ±20V | |||
|
|
VIEW |
2,035
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 100A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 100V | 100A (Tc) | 3.8 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 8800pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
870
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 60A TO220SIS | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 30W (Tc) | N-Channel | - | 60V | 40A (Tc) | 10.4 mOhm @ 20A, 10V | 4V @ 300µA | 23nC @ 10V | 1700pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
2,995
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 30A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 25W (Tc) | N-Channel | - | 60V | 30A (Tc) | 15 mOhm @ 15A, 10V | 4V @ 200µA | 16nC @ 10V | 1050pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
1,063
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 72A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 120V | 72A (Tc) | 4.5 mOhm @ 36A, 10V | 4V @ 1mA | 130nC @ 10V | 8100pF @ 60V | 10V | ±20V | |||
|
|
VIEW |
3,454
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 65A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 100V | 65A (Tc) | 4.8 mOhm @ 32.5A, 10V | 4V @ 1mA | 81nC @ 10V | 5400pF @ 50V | 10V | ±20V | |||
|
|
VIEW |
2,564
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 100A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 60V | 100A (Tc) | 2.7 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | 10500pF @ 30V | 10V | ±20V | |||
|
|
VIEW |
2,002
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 120V 56A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | - | 120V | 56A (Tc) | 7.5 mOhm @ 28A, 10V | 4V @ 1mA | 69nC @ 10V | 4200pF @ 60V | 10V | ±20V | |||
|
|
VIEW |
3,756
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 100V 40A TO-220 | U-MOSVIII-H | Active | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 35W (Tc) | N-Channel | - | 100V | 40A (Tc) | 8.2 mOhm @ 20A, 10V | 4V @ 500µA | 49nC @ 10V | 3000pF @ 50V | 10V | ±20V | |||
