- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | |||||||||||||||||||||||||
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VIEW |
2,939
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 50V 45A TO-3PN | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 125W (Tc) | N-Channel | 50V | 45A (Ta) | 20 mOhm @ 25A, 10V | 3.5V @ 1mA | 68nC @ 10V | 2300pF @ 10V | 10V | ±20V | |||
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VIEW |
3,748
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 60A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 150W (Tc) | N-Channel | 30V | 60A (Ta) | 12 mOhm @ 30A, 10V | 3V @ 1mA | 66nC @ 10V | 2300pF @ 10V | 10V | ±20V | |||
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VIEW |
2,119
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 250V 30A TO-3PN | - | Obsolete | Tube | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TO-3P(N) | 150W (Tc) | N-Channel | 250V | 30A (Ta) | 68 mOhm @ 15A, 10V | 3.5V @ 1mA | 132nC @ 10V | 5400pF @ 10V | 10V | ±20V | |||
